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IRF7603
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.029
––– V/°C
Reference to 25°C, I D = 1mA
?
-100 V GS = -20V
––– R G = 6.2 ?
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
1.0
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
2.4
5.6
5.7
28
18
12
520
200
80
0.035 V GS = 10V, I D = 3.7A ?
0.060 V GS = 4.5V, I D = 1.9A ?
––– V V DS = V GS , I D = 250μA
––– S V DS = 10V, I D = 1.9A
1.0 V DS = 24V, V GS = 0V
μA
25 V DS = 24V, V GS = 0V, T J = 125°C
nA
100 V GS = 20V
27 I D = 3.7A
3.6 nC V DS = 24V
8.4 V GS = 10V, See Fig. 6 and 9 ?
––– V DD = 15V
––– I D = 3.7A
ns
––– R D = 4.0 ?, See Fig. 10 ?
––– V GS = 0V
––– pF V DS = 25V
––– ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
–––
–––
–––
–––
–––
–––
53
87
1.8
30
1.2
80
130
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 3.7A, V GS = 0V ?
T J = 25°C, I F = 3.7A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 3.7A, di/dt ≤ 130A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 10sec.
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